FHI
The NOMAD Laboratory

Novel Materials Discovery at the FHI of the Max-Planck-Gesellschaft
and IRIS-Adlershof of the Humboldt-Universit├Ąt zu Berlin

Publications

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Before1990

Articles

  1. K. Horn, M. Scheffler, and A.M. Bradshaw,
    "Photoemission from physisorbed xenon: Evidence for lateral interactions". Phys. Rev. Lett. 41, 822-825 (1978).
    Reprint download: pdf
  2. M. Scheffler, K. Kambe, and F. Forstmann,
    "Angle-resolved photoemission from adsorbates: Theoretical considerations of polarization effects and symmetry". Solid State Communications 25, 93-99 (1978).
    Reprint download: pdf
  3. A.M. Bradshaw and M. Scheffler,
    "Lateral interactions in adsorbed layers". J. Vac. Sci. Tech. 16, 447-454 (1979).
    Reprint download: pdf
  4. M. Scheffler,
    "The influence of lateral interactions on the vibrational spectrum of adsorbed CO". Surf. Sci. 81, 562-570 (1979).
    Reprint download: pdf
  5. M. Scheffler,S.T. Pantelides, N.O. Lipari, and J. Bernholc,
    "Identification and properties of native defects in GaP". Phys. Rev. Lett. 47, 413 (1981).
    Reprint download: pdf
  6. J. Bernholc, N.O. Lipari, S.T. Pantelides, and M. Scheffler,
    "Electronic structure of deep sp-bonded impurities in silicon". Phys. Rev. B 26, 5706-5715 (1982).
    Reprint download: pdf
  7. M. Scheffler, J.P. Vigneron, and G.B. Bachelet,
    "Tractable approach for calculating lattice distortions around simple defects in semiconductors: Application to the single donor Ge in GaP". Phys. Rev. Lett. 49, 1765-1768 (1982).
    Reprint download: pdf
  8. O. Schirmer and M. Scheffler,
    "Determination of deep donor binding energies from their g values". J. Phys. C 15, L645-L650 (1982).
    Reprint download: pdf
  9. M. Scheffler, J.P. Vigneron, and G.B. Bachelet,
    "Total-energy gradients and lattice distortions at point defects in semiconductors". Phys. Rev. B 31, 6541-6551 (1985).
    Reprint download: pdf
  10. C.M. Weinert and M. Scheffler,
    "Chalcogen and vacancy pairs in silicon: Electronic structure and stabilities". In: Defects in Semiconductors. (Ed.) H.J. von Bardeleben. Mat. Sci. Forum 10-12, 25-30 (1986).
    Reprint download: pdf
  11. C.M. Weinert and M. Scheffler,
    "Mechanisms of defect pairing in semiconductors: A study for chalcogens in silicon". Phys. Rev. Lett. 58, 1456-1459 (1987).
    Reprint download: pdf
  12. J. Dabrowski and M. Scheffler,
    "Theoretical evidence for an optically inducible structural transition of the isolated As antisite in GaAs: Identification and explanation of EL2". Phys. Rev. Lett. 60, 2183-2186 (1988).
    Reprint download: pdf
  13. M. Scheffler,
    "Thermodynamic aspects of bulk and surface defects - first-principle calculations -". In: Physics of Solid Surfaces 1987. (Ed.) J. Koukal. Elsevier, Amsterdam 1988, 115-122.
    Reprint download: pdf
  14. M. Scheffler and J. Dabrowski,
    "Parameter-free calculations of total energies, interatomic forces and vibrational entropies of defects in semiconductors". Phil. Mag. A 58, 107-121 (1988).
    Reprint download: pdf
  15. J. Dabrowski and M. Scheffler,
    "The isolated arsenic antisite defect in GaAs and the properties of EL2". Phys. Rev. B 40, 10391-10401 (1989).
    Reprint download: pdf
  16. M. Scheffler,
    "Chemical binding, stability and metastability of defects in semiconductors". Festkörperprobleme 29. (Ed.) U. Rössler. Vieweg, Braunschweig 1989, 231-250.
    Reprint download: pdf

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