ringberg

International GaN Workshop at Schloss Ringberg

January 20 - 24 1998

Surface Morphology, Interfaces and Growth of the III-Nitrides

Organized By:
J. Neugebauer¹, M. Scheffler¹ and B. Meyer²

1 Fritz-Haber-Institut der Max-Plack-Gesellschaft

2 University of Giessen

List of Contents:

1. Scope of the Workshop

2. List of Invited Speakers

3. Program (Preliminary)

4. Information about Schloss Ringberg

5. Submission of Abstracts

6. Registration

7. Financial Support

8. Sponsors

1. Scope of the Workshop

Despite progress in fabricating GaN based devices, achieving insight into the fundamental growth mechanisms of GaN is still in its infancy. Even basic properties of surfaces, surface diffusion, and interfaces such as stoichiometry, atomic geometry, and band structure are not well understood. A deeper knowledge of these mechanisms is crucial to improve growth in a systematic way, thereby enabling low background carrier concentrations and dislocation densities to be obtained.

The objective of this international workshop is to provide a forum for nitride researchers to exchange their knowledge by presenting their latest results. The workshop is limited to 60 participants enabling in-depth technical discussions. The focus will be on latest experimental and theoretical results concerning the properties of surfaces, internal and external interfaces, and growth with particular emphasize on atomic scale processes.

The workshop will begin on Tuesday, January 22 at 6 p.m. and will end on Saturday after breakfast.

Topics:

Surfaces

atomic and electronic structure, characterization, simulation, adatom diffusion on surfaces

Interfaces

internal interfaces and dislocations, substrate-nitride interface, contacts, valence-band offsets, electronic interface states, atomic structure

Growth

growth techniques (MOCVD, HVPE, MBE, ...), precursors, role of buffer layer, strategies to optimize growth

2. List of Invited Speakers

Surfaces:
F. Bechstedt (Jena, Germany)	Chemical Trends in Surface Properties of III-Nitrides
J. Bernholc (Raleigh, USA)	Theory of Surfaces, Adsorbates, Heterostructures, Defects and Ordering in Nitride Semiconductors
O. Brandt (Berlin, Germany)	Surfaces and Interfaces in the GaN/GaAs Materials System
G. Feuillet (Grenoble, France)	Surface Reconstructions and 2D/3D Growth Processes for Nitride Semiconductors
J. E. Northrup (Palo Alto, USA)	Structure, Energetics, and Electronic Properties of GaN and AlN Surfaces
A.R. Smith (Pittsburgh, USA)	Surface Reconstructions of Wurtzite GaN Studied by Scanning Tunneling Microscopy
T. Zywietz (Berlin, Germany)	Surfaces, Surfactants, and Diffusion at Cubic and Hexagonal GaN
Interfaces:
V. Fiorentini (Cagliari, Italy)	Polarization, Offsets, and Device Design of III-N Nanostructures
H. Lüth (Jülich, Germany)	Valence Band Offsets at SiC/AlN/GaN Heterojunctions
W. Mönch (Duisburg, Germany)	Electronic Properties of Metals on Group-III Nitrides: Three Examples
P. Vogl (München, Germany)	Energetics and Atomic Structure of the SiC/GaN, SiC/AlN Interfaces
C. G. Van de Walle (Palo Alto, USA)	Interfaces and Band Offsets in III-Nitrides
Growth:
H. Amano (Tokyo, Japan)	In situ Observation of the Crystallization Process of the Low Temperature Deposited Buffer Layer on Sapphire
T. Fraunheim (Chemnitz, Germany)	Ab initio Selfconsistent-Charge Tight-Binding: Applications to III-V Semiconductor Surfaces and Dislocations
D. Hommel (Bremen, Germany)	Comparison of Structural and Electrical Properties of GaN Layers Grown with ECR- and rf-Plasma Sources
M. Kamp (Ulm, Germany)	Growth Kinetics of Group III-Nitrides Using Ammonia in MBE
H. Lakner (Duisburg, Germany)	Nanostructure and Spatially Resolved Electro-Optical Properties of Group III-Nitride Quantum Wells
B. Meyer (Giessen, Germany)	Low Presure CVD Growth of GaN - Structural, Optical and Electrical Properties
H. Riechert (München, Germany)	MBE Growth of GaN
J. Speck (Santa Barbara, USA)	Defect Generation and Morphological Evolution in GaN Heteroepitaxy
O. Ambacher (München, Germany)	Consequences of the Special Physical and Chemical Properties on the Growth of Group-III Nitride Heterostructures by MBE and MOCVD
H. Obloh (Freiburg, Germany)	Issues of Growth, Morphology and Interface-Abruptness of III-Nitride Heterostructures Grown by MOCVD
T. Suski (Warsaw, Poland)	Role of High Pressure in GaN Crystal Growth, Activation of Impurities and Defect Annihilation
E. Weber (Berkeley, USA)	Thin film Growth of GaN: The Role of Strain, Stoichiometry and Doping

3. Program

Tuesday, Jan. 20 (Opening)

15:00 - 18:00	Registration
18:30 - 20:00	Dinner
20:00 - 20:15	Opening (J. Neugebauer, B. Meyer, M. Scheffler)
Chair: J. Pollmann
20:15 - 21:00	A.R. Smith (Pittsburgh, USA)	Surface reconstructions of wurtzite GaN studied by scanning tunneling microscopy
21:00 - 21:45	J. E. Northrup (Palo Alto, USA)	Structure, energetics, and electronic properties of GaN and AlN surfaces
21:45	Welcome Party (sponsored by AIXTRON AG)

Wednesday, Jan. 21 (Surfaces)

8:00 - 9:00	Breakfast
Chair: P. Boguslawski
9:00 - 9:45	G. Feuillet (Grenoble, France)	Surface reconstructions and 2D/3D growth processes for nitride semiconductors
9:45 - 10:30	T. Zywietz (Berlin)	Surfaces, Surfactants and Diffusion at Cubic and Hexagonal GaN
10:30 - 11:00	Coffee break
Chair: M. Scheffler
11:00 - 11:45	F. Bechstedt (Jena)	Chemical trends in surface properties of III-nitrides
11:45 - 12:30	J. Bernholc (Raleigh, USA)	Theory of Surfaces, Adsorbates, Heterostructures, Defects and Ordering in Nitride Semiconductors
12:30	Lunch
14:00	Guided tour through the castle
15:00 - 17:00	Poster Session I
Chair: D. Bimberg
17:00 - 17:45	O. Brandt (Berlin)	Surfaces and interfaces in the GaN/GaAs materials system
17:45 - 18:30	H. Lüth (Juelich)	Valence Band Offsets at SiC/AlN/GaN Heterojunctions
18:30 - 20:00	Dinner
20:00 -	Rump Session (J. Neugebauer)	Properties and morphology of surfaces and interfaces

Thursday, Jan. 22 (Interfaces)

8:00 - 9:00	Breakfast
Chair: K. Horn
9:00 - 9:45	H. Lakner (Duisburg)	Nanostructure and spatially resolved electro-optical properties of group III-nitride quantum wells
9:45 - 10:30	T. Fraunheim (Chemnitz)	Ab initio selfconsistent-charge tight-binding: applications to III-V semiconductor surfaces and interfaces
10:30 - 11:00	Coffee break
Chair: A. Rizzi
11:00 - 11:45	W. Mönch (Duisburg)	Electronic properties of metals on group-III nitrides: Three examples
11:45 - 12:30	C. G. Van de Walle (Palo Alto, USA)	Interfaces and band offsets in III-nitrides
12:30	Lunch
14:00	Walk through the winter forest
16:00 - 17:00	Poster Session II
Chair: R. Nieminen
17:00 - 17:45	V. Fiorentini (Cagliari, Italy)		Polarization, Offsets, and Device Design of III-N Nanostructures
17:45 - 18:30	P. Vogl (München)	Energetics and Atomic Structure of the SiC/GaN, SiC/AlN Interfaces
18:30 - 20:00	Dinner
20:00 -	Concert

Friday, Jan. 23 (Growth)

8:00 - 9:00	Breakfast
Chair: J. Neugebauer
9:00 - 9:45	H. Amano (Nagoya, Japan)	In situ observation of the crystallization process of the low temperature deposited buffer layer on sapphire
9:45 - 10:30	D. Hommel (Bremen)	Comparison of structural and electrical properties of GaN layers grown with ECR- and rf-plasma sources
10:30 - 11:00	Coffee break
Chair: A. Krost
11:00 - 11:45	J. Speck (Santa Barbara, USA)	Defect generation and morphological evolution in GaN heteroepitaxy
11:45 - 12:30	B. Meyer (Giessen)	Low pressure CVD growth of GaN - structural, optical and electrical properties
12:30	Lunch
Chair: J. Christen
14:15 - 15:00	H. Obloh	Issues of growth, morphology and interface-abruptness of III-Nitride heterostructures grown by MOCVD
15:00 - 15:45	H. Riechert (München)	MBE Growth of GaN
Chair: D. As
15:45 - 16:30	T. Suski (Warsaw, Poland)	Role of high pressure in GaN crystal growth, activation of impurities and defect annihilation
16:30 - 17:00	Coffee break
Chair: B. Meyer
17:00 - 17:45	O. Ambacher (München)	Consequences of the special physical and chemical properties on the growth of group-III nitride heterostructures by MBE and MOCVD
17:45 - 18:30	M. Kamp (Ulm)	Growth kinetics of group III nitrides using ammonia in MBE
18:30 - 20:00	Dinner
20:00 - 20:45	E. Weber (Berkeley, USA)	Thin film growth of GaN: the role of strain, stoichiometry and doping
20:45 -	Rump Session (M. Kamp, H. Riechert, J. Speck)	Growth Techniques and Mechanisms

Saturday, Jan. 24 (Departure)

8:00 - 9:00	Breakfast
9:00	Check Out and Departure

4. Information about Schloss Ringberg

Schloss Ringberg

D-83700 Rottach-Egern

Germany

The weather in January is typically quite cold (average between -5 and 5 ° C, 55 - 65 F) with occasional snowfall. Be prepared for winter like weather.

General Information

How to get to Ringberg Castle

5. Submission of Abstracts

Abstract Deadline: October 31, 1997

Authors are requested to electronically submit a one-page abstract including figures and tables.

Abstracts must be in Microsoft Word or Latex format (A4 or B4, leave 2 cm margins on the sides and 2.5 cm margins at the top and bottom).

The title should be placed at the top of the abstract, followed by the author(s) name(s), affiliation(s), address, telephone number, fax number, and e-mail address.

The abstracts will be distributed at the meeting.

Please send the abstracts to the following address:

zywietz@fhi-berlin.mpg.de

You will be informed by e-mail about acceptance of your abstract until November 15.

There will be no conference proceedings.

6. Registration

Registration Deadline: November 30, 1997

There will be no registration fee. The cost for full board and lodging will be 500 DM. This includes the room rate for four nights, breakfast, lunch and dinner. Please note that we cannot accept credit cards! On Tuesday, January 20, there will be dinner only. On Saturday, January 24, breakfast will be served.

To register, please send an e-mail with your name, affiliation and arrival time to:

zywietz@fhi-berlin.mpg.de

7. Financial Support

For young scientists presenting a contributed talk or poster there may be financial support covering the costs for full board and lodging.

8. Sponsors

The workshop will be sponsored by the Deutsche Forschungsgemeinschaft (DFG) and the Max-Plack-Gesellschaft (MPG). The social program will be sponsored by the AIXTRON AG (http://www.aixtron.com/).

This Page is maintained by: Tosja Zywietz

Last update: January 13, 1998