The NOMAD Laboratory

Novel Materials Discovery at the FHI of the Max-Planck-Gesellschaft
and IRIS-Adlershof of the Humboldt-Universit├Ąt zu Berlin


Publications of the NOMAD Laboratory

Use our Publications Search:

2024 2023 2022 2021 2020 2019 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 2008 2007 2006 2005 2004 2003 2002 2001 2000 1999 1998 1997 1996 1995 1994 1993 1992 1991 1990 Before1990




  1. J. Bernholc, N.O. Lipari, S.T. Pantelides, and M. Scheffler,
    "Electronic structure of deep sp-bonded impurities in silicon". Phys. Rev. B 26, 5706-5715 (1982).
    Reprint download: pdf
  2. A.M. Bradshaw and M. Scheffler,
    "Lateral interactions in adsorbed layers". J. Vac. Sci. Tech. 16, 447-454 (1979).
    Reprint download: pdf
  3. J. Dabrowski and M. Scheffler,
    "Theoretical evidence for an optically inducible structural transition of the isolated As antisite in GaAs: Identification and explanation of EL2". Phys. Rev. Lett. 60, 2183-2186 (1988).
    Reprint download: pdf
  4. J. Dabrowski and M. Scheffler,
    "The isolated arsenic antisite defect in GaAs and the properties of EL2". Phys. Rev. B 40, 10391-10401 (1989).
    Reprint download: pdf
  5. K. Horn, M. Scheffler, and A.M. Bradshaw,
    "Photoemission from physisorbed xenon: Evidence for lateral interactions". Phys. Rev. Lett. 41, 822-825 (1978).
    Reprint download: pdf
  6. M. Scheffler, K. Kambe, and F. Forstmann,
    "Angle-resolved photoemission from adsorbates: Theoretical considerations of polarization effects and symmetry". Solid State Communications 25, 93-99 (1978).
    Reprint download: pdf
  7. M. Scheffler,
    "The influence of lateral interactions on the vibrational spectrum of adsorbed CO". Surf. Sci. 81, 562-570 (1979).
    Reprint download: pdf
  8. M. Scheffler,S.T. Pantelides, N.O. Lipari, and J. Bernholc,
    "Identification and properties of native defects in GaP". Phys. Rev. Lett. 47, 413 (1981).
    Reprint download: pdf
  9. M. Scheffler, J.P. Vigneron, and G.B. Bachelet,
    "Tractable approach for calculating lattice distortions around simple defects in semiconductors: Application to the single donor Ge in GaP". Phys. Rev. Lett. 49, 1765-1768 (1982).
    Reprint download: pdf
  10. M. Scheffler, J.P. Vigneron, and G.B. Bachelet,
    "Total-energy gradients and lattice distortions at point defects in semiconductors". Phys. Rev. B 31, 6541-6551 (1985).
    Reprint download: pdf
  11. M. Scheffler,
    "Thermodynamic aspects of bulk and surface defects - first-principle calculations -". In: Physics of Solid Surfaces 1987. (Ed.) J. Koukal. Elsevier, Amsterdam 1988, 115-122.
    Reprint download: pdf
  12. M. Scheffler and J. Dabrowski,
    "Parameter-free calculations of total energies, interatomic forces and vibrational entropies of defects in semiconductors". Phil. Mag. A 58, 107-121 (1988).
    Reprint download: pdf
  13. M. Scheffler
    "Chemical binding, stability and metastability of defects in semiconductors". Festkörperprobleme 29. (Ed.) U. Rössler. Vieweg, Braunschweig 1989, 231-250.
    Reprint download: pdf

  14. O. Schirmer and M. Scheffler,
    "Determination of deep donor binding energies from their g values". J. Phys. C 15, L645-L650 (1982).
    Reprint download: pdf
  15. C.M. Weinert and M. Scheffler,
    "Chalcogen and vacancy pairs in silicon: Electronic structure and stabilities". In: Defects in Semiconductors. (Ed.) H.J. von Bardeleben. Mat. Sci. Forum 10-12, 25-30 (1986).
    Reprint download: pdf
  16. C.M. Weinert and M. Scheffler,
    "Mechanisms of defect pairing in semiconductors: A study for chalcogens in silicon". Phys. Rev. Lett. 58, 1456-1459 (1987).
    Reprint download: pdf