Publications
Publications of the NOMAD Laboratory
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Before1990
Articles
- J. Bernholc, N.O. Lipari, S.T. Pantelides, and M. Scheffler,
"Electronic structure of deep sp-bonded impurities in silicon". Phys. Rev. B 26, 5706-5715 (1982).
Reprint download: pdf - A.M. Bradshaw and M. Scheffler,
"Lateral interactions in adsorbed layers". J. Vac. Sci. Tech. 16, 447-454 (1979).
Reprint download: pdf - J. Dabrowski and M. Scheffler,
"Theoretical evidence for an optically inducible structural transition of the isolated As antisite in GaAs: Identification and explanation of EL2". Phys. Rev. Lett. 60, 2183-2186 (1988).
Reprint download: pdf - J. Dabrowski and M. Scheffler,
"The isolated arsenic antisite defect in GaAs and the properties of EL2". Phys. Rev. B 40, 10391-10401 (1989).
Reprint download: pdf - K. Horn, M. Scheffler, and A.M. Bradshaw,
"Photoemission from physisorbed xenon: Evidence for lateral interactions". Phys. Rev. Lett. 41, 822-825 (1978).
Reprint download: pdf - M. Scheffler, K. Kambe, and F. Forstmann,
"Angle-resolved photoemission from adsorbates: Theoretical considerations of polarization effects and symmetry". Solid State Communications 25, 93-99 (1978).
Reprint download: pdf - M. Scheffler,
"The influence of lateral interactions on the vibrational spectrum of adsorbed CO". Surf. Sci. 81, 562-570 (1979).
Reprint download: pdf - M. Scheffler,S.T. Pantelides, N.O. Lipari, and J. Bernholc,
"Identification and properties of native defects in GaP". Phys. Rev. Lett. 47, 413 (1981).
Reprint download: pdf - M. Scheffler, J.P. Vigneron, and G.B. Bachelet,
"Tractable approach for calculating lattice distortions around simple defects in semiconductors: Application to the single donor Ge in GaP". Phys. Rev. Lett. 49, 1765-1768 (1982).
Reprint download: pdf - M. Scheffler, J.P. Vigneron, and G.B. Bachelet,
"Total-energy gradients and lattice distortions at point defects in semiconductors". Phys. Rev. B 31, 6541-6551 (1985).
Reprint download: pdf - M. Scheffler,
"Thermodynamic aspects of bulk and surface defects - first-principle calculations -". In: Physics of Solid Surfaces 1987. (Ed.) J. Koukal. Elsevier, Amsterdam 1988, 115-122.
Reprint download: pdf - M. Scheffler and J. Dabrowski,
"Parameter-free calculations of total energies, interatomic forces and vibrational entropies of defects in semiconductors". Phil. Mag. A 58, 107-121 (1988).
Reprint download: pdf M. Scheffler
"Chemical binding, stability and metastability of defects in semiconductors". Festkörperprobleme 29. (Ed.) U. Rössler. Vieweg, Braunschweig 1989, 231-250.
Reprint download: pdf- O. Schirmer and M. Scheffler,
"Determination of deep donor binding energies from their g values". J. Phys. C 15, L645-L650 (1982).
Reprint download: pdf - C.M. Weinert and M. Scheffler,
"Chalcogen and vacancy pairs in silicon: Electronic structure and stabilities". In: Defects in Semiconductors. (Ed.) H.J. von Bardeleben. Mat. Sci. Forum 10-12, 25-30 (1986).
Reprint download: pdf - C.M. Weinert and M. Scheffler,
"Mechanisms of defect pairing in semiconductors: A study for chalcogens in silicon". Phys. Rev. Lett. 58, 1456-1459 (1987).
Reprint download: pdf
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